HSINCHU, TAIWAN -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design and IP provider, announced the continued expansion of its IP product lines on UMC’s 14nm FinFET Compact (14FCC) platform, covering USB 2.0/USB 3.2 Gen1 PHY, LVDS TX/RX I/O, DDR 3/4 combo PHY (up to 4.2 Gbps), and LPDDR 4/4X/5 PHY (up to 6.4 Gbps). Leveraging UMC’s 14nm platform, these IP solutions deliver an ideal balance of performance, power consumption, and cost, making them well suited for applications such as industrial control, AIoT, networking, smart displays, multi-function printers (MFP), and edge AI.

Faraday continues building out its IP solutions on UMC’s 14nm node. All these IPs are silicon-proven to ensure production-quality, significantly reducing design risk while assisting designers in shortening development cycles and effectively managing design and manufacturing costs. For edge AI applications, Faraday’s fabless OSAT Service provides advanced 2.5D/3D packaging options, including memory controller and I/O integration, to meet the high-bandwidth and capacity requirements of AI computing and further enhance overall system-performance.

“With decades of IP development and ASIC design experience, Faraday continues investing in expanding its IP offerings to address diverse customer requirements,” said Flash Lin, Chief Operating Officer of Faraday. “By combining a robust, silicon-proven IP portfolio with deep ASIC-design expertise, Faraday helps customers transition to the FinFET platform and leverage the advantages of ASIC solutions in AI applications.”